SIXPOINT MATERIALS, INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
C30B SINGLE-CRYSTAL GROWTH 1541
 
  
 
C01B NON-METALLIC ELEMENTS; COMPOUNDS THEREOF673
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 299
 
  
 
H01G CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE 264
 
  
 
B23K SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM 192

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2017/0198,407 METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTHMar 28, 17Jul 13, 17[C30B]
2016/0215,410 SEED SELECTION AND GROWTH METHODS FOR REDUCED-CRACK GROUP III NITRIDE BULK CRYSTALSJan 22, 16Jul 28, 16[G01N, C30B]
2016/0010,238 METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH PRESSURE VESSELSep 24, 15Jan 14, 16[C30B]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9909230 Seed selection and growth methods for reduced-crack group III nitride bulk crystalsJan 22, 16Mar 06, 18[G01N, C30B]
9885121 High pressure reactor and method of growing group III nitride crystals in supercritical ammoniaJun 27, 16Feb 06, 18[C01B, H01L, C30B]
9803293 Method for producing group III-nitride wafers and group III-nitride wafersFeb 25, 09Oct 31, 17[C30B]
9452495 Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicerJul 06, 12Sep 27, 16[B23K]
9441311 Growth reactor for gallium-nitride crystals using ammonia and hydrogen chlorideMay 22, 14Sep 13, 16[C23C, C30B]
8971018 Ultracapacitors using transition metal nitride-containing electrode and transition metal nitrideJun 15, 12Mar 03, 15[C01B, H01G]
8920762 Synthesis method of transition metal nitride and transition metal nitrideJun 15, 12Dec 30, 14[C01B, H01G]
8852341 Methods for producing GaN nutrient for ammonothermal growthNov 23, 09Oct 07, 14[C01B, C30B]
8764903 Growth reactor for gallium-nitride crystals using ammonia and hydrogen chlorideMay 05, 10Jul 01, 14[C23C]
8728234 Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growthJun 04, 09May 20, 14[C30B]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2014/0326,175 REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALSAbandonedJul 14, 14Nov 06, 14[C30B]
2014/0209,925 METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTHAbandonedMar 28, 14Jul 31, 14[H01L]
2013/0216,845 HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTALAbandonedMar 19, 13Aug 22, 13[C30B, B32B]
2013/0206,057 HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTALAbandonedMar 04, 13Aug 15, 13[C30B]
2010/0095,882 REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALSAbandonedOct 16, 09Apr 22, 10[B01J, C30B]

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